TRIPLE GATE FinFET AND DOUBLE GATE FinFET HAVING FINS OF DIFFERENT VERTICAL DIMENSION

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor structure including a triple gate FinFET and a double gate FinFET having fins of different vertical dimension, and to provide a manufacturing method of a semiconductor structure.;SOLUTION: An injection chemical species containing germanium is injected into the bottom part 33 of a selected semiconductor fin 13' having vertical dimension desired to be reduced. The bottom part 33 of the selected semiconductor fin 13' having the injection chemical species is subjected to selective etching for a semiconductor material where the injection chemical species does not exist, i.e., the semiconductor material at the upper part 23 of the semiconductor fin, and of other semiconductor fin 13 where the injection chemical species does not exist. Consequently, a FinFET having a complete vertical dimension and a high on current, and a FinFET having a reduced vertical dimension and a low on current are obtained on the same semiconductor substrate. Vertical dimension of a semiconductor fin in a selected FinFET can be adjusted, by adjusting the depth of the injection chemical species.;COPYRIGHT: (C)2013,JPO&INPIT