首页> 外国专利> SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR WAFER WITH ADHESIVE LAYER MANUFACTURING METHOD, SEMICONDUCTOR WAFER WITH SEMICONDUCTOR ELEMENT MANUFACTURING METHOD AND SEMICONDUCTOR WAFER LAMINATE MANUFACTURING METHOD

SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR WAFER WITH ADHESIVE LAYER MANUFACTURING METHOD, SEMICONDUCTOR WAFER WITH SEMICONDUCTOR ELEMENT MANUFACTURING METHOD AND SEMICONDUCTOR WAFER LAMINATE MANUFACTURING METHOD

机译:半导体器件制造方法,具有粘合层制造方法的半导体晶片,具有半导体元件制造方法的半导体晶片以及半导体晶片叠层制造方法

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor wafer with an adhesive layer manufacturing method and a manufacturing method of a semiconductor device using the semiconductor wafer with the adhesive layer, which can reduce voids and minimize warp after grinding.SOLUTION: A semiconductor device manufacturing method comprises the steps of: obtaining a semiconductor wafer 40 with an adhesive layer having a structure of more than one layer and provided with a B-stage adhesive layer containing a flux component on an uppermost surface layer by coating of more than one type of liquid photosensitive adhesive 6, 7 and light irradiation on the coated film, on a circuit surface of a semiconductor wafer 10 having the circuit surface on which metal bumps 12 are formed; and pressure bonding the semiconductor wafer 40 with the adhesive layer and another semiconductor wafer 50 while sandwiching the adhesive layer of the semiconductor wafer 40 with the adhesive layer.
机译:解决的问题:提供一种具有粘合层的半导体晶片的制造方法,以及使用该具有粘合层的半导体晶片的半导体器件的制造方法,其可以减少空隙并最小化磨削后的翘曲。解决方案:一种半导体器件的制造方法包括以下步骤:通过涂覆多于一种类型的液体光敏材料,获得具有具有多于一层的结构的粘合剂层的半导体晶片40,并且在最上表面层上设置有包含助熔剂成分的B阶段粘合剂层。在具有形成有金属凸块12的电路表面的半导体晶片10的电路表面上的粘合剂6、7和在涂膜上的光照射;在将半导体晶片40的粘接剂层夹在中间的状态下,将半导体晶片40和粘接剂层与另一半导体晶片50加压粘接。

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