Trench metal oxide semiconductor field-effects transistor transistor

摘要

The trench metal oxide semiconductor field-effects transistor transistor (TMOSFET), the multiple mesas which are laid out between the multiple gate fields are included. Each mesa includes the drift field and the computer field. As for width of the mesa, it is order of the quantum well size in the surface with the gate insulator field and the computer field. In addition as for TMOSFET, the multiple gate insulator fields which are laid out with the gate field and the computer field, the drift field and the drain field are included. Originating in the thickness of the gate insulator field with the gate field and the aforementioned drain field, getotoudorein electric field of cross direction is generated substantially in off state, because of this, the deplete of the electric charge inside the drift field is supported. Choice figure Drawing 2