In order to improve inter-particle contact portion in the semiconductor metal oxide particle layer precursor compounds likely to occur in the chemical changes thermally and to fill the gap

摘要

Step of applying to the substrate a porous layer (A) is a semiconductor metal oxide, a process of treating with a solution containing a precursor compound of the semiconductive metal oxide and the porous layer formed in step (B) in (A), includes at least a step, for thermally processing the obtained layer (C) in step (B), of the corresponding metals, the precursor compound semiconductor metal oxide in the step (B) is at least 3 carbon mono having atomic - di - derivatives of polycarboxylic acids, alkoxides, hydroxides, semicarbazide, carbamate, hydroxamate, isocyanates, amidine, amidrazone, or urea -, di - or mono carboxylic salt of polycarboxylic acid or wherein the azide derivatives, hydroxylamines, oximes, Okishimeto, urethane, ammonia, amines, phosphines, ammonium compounds, nitrates, or nitrites, and is selected from the group consisting of mixtures thereof. None [Selection Figure]