THERMALLY LABILE PRECURSOR COMPOUNDS FOR IMPROVING THE INTERPARTICULATE CONTACT SITES AND FOR FILLING THE INTERSTICES IN SEMICONDUCTIVE METAL OXIDE PARTICLE LAYERS

摘要

The present invention at least (A) applying a porous semiconductor layer of at least one metal oxide on the substrate, (B) step by step to process the porous layers obtained from (A) with a solution containing at least one precursor compound of a semiconductor metal oxide, at least in the pores of the porous layer to be partially filled with the solution, and (C) phase step by heating the layer obtained in (B) for switching the at least one precursor compound of the metal oxide semiconductor as a semiconductor metal oxide Containing, as a method for manufacturing a layer comprising one or more semiconductor metal oxide on a substrate, comprising at least one precursor compound of at least one semiconductor metal oxide in (B) is of the metal monocarboxylic acid, dicarboxylic acid or polyacrylic acid derivatives, or mono-carboxylic acid having 3 or more carbon atoms, dicarboxylic acids or polycarboxylic acids of a carboxylate, alkoxide, hydroxide, semi cover azide, carbamate, hydroxyl roksa formate, isocyanate, amidine, amidrazone , urea derivatives, hydroxylamines, oximes, oxy mate, on the will of manufacture is selected from urethane, ammonia, amines, phosphines, ammonium compounds, nitrates, nitrites or azide, and mixtures thereof will be. ;