The high mobility channel (HighMobilityChannels) the source of the device which it possesses/drain engineering

摘要

PURPOSE: A source/drain of devices including high mobile channels is provided to improve the driving current of the final transistors and reduction a source-drain resistance. CONSTITUTION: A source and drain region (42) is formed in a groove. A silicide region is formed ON the source and drain region. A IV semiconductor region (46) is formed ON a buffer layer (44). The buffer layer is made of III-V compound semiconductor materials. The lower side of the buffer layer has a lattice constant which is similar to the lattice constant of a channel layer (26).