Source/Drain Engineering of Devices with High-Mobility Channels

摘要

The integrated circuit includes a substrate , and the substrate above the channel . The channel comprises a first 1 - compound semiconductor material formed into a group and group elements . There is a gate structure over the channel . And wherein the source / drain regions adjacent to the channel , it is silicon , germanium , and is selected from the group consisting of substantially into a combination of these , and a region formed of a doped Group group semiconductor material . ;