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A method of manufacturing the same and InSb thin film magnetic sensor using the same and thin film laminate
A method of manufacturing the same and InSb thin film magnetic sensor using the same and thin film laminate
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机译:相同的制造方法以及使用该InSb薄膜叠层体的InSb薄膜磁传感器
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摘要
The present invention relates to an InSb thin film magnetic sensor and thin film stack flux density can be detected directly with high sensitivity, are used in a micro InSb thin film magnetic sensor with low current consumption and power consumption. The magnetic sensor unit, or an InSb thin film magnetic sensor has a magnetic field detector and InSb thin film. InSb operation layer is InSb thin film formed on a substrate (1) and (3) shows the p-type conductivity or insulating or high resistance (3) The InSb active layer, InSb larger layer bandgap I have provided 1-x-y Sb mixed crystal layer Al x Ga y In is (0 ≦ x, y ≦ 1) and (2). Mixed crystal layer (2), is provided between the substrate and (1) InSb operation layer (3), the range of 17% from 5.0% content of atoms of Ga and Al (x + y) is (0. is 05 ≦ x + y ≦ 0.17).
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机译:本发明涉及一种InSb薄膜磁传感器,可以高灵敏度直接检测薄膜堆叠的通量密度,用于电流消耗和功耗低的微型InSb薄膜磁传感器。磁性传感器单元或InSb薄膜磁性传感器具有磁场检测器和InSb薄膜。 InSb操作层是在基板(1)上形成的InSb薄膜,并且(3)显示p型导电性或绝缘性或高电阻(3)InSb有源层,InSb较大层的带隙I已提供 1-xy Sub> Sb混合晶体层 Al Sub> x Ga Sub> y In Sub>为(0≤x,y≤1)和(2)。在基板和(1)InSb操作层(3)之间设置混合晶体层(2),Ga和Al(x + y)的原子含量为5.0%至17%的范围是(0.是05≤ x +y≤0.17)。
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