Production of InSb thin films through annealing Sb_2S_3-In thin films

摘要

A method to produce large area indium antimonide thin films through a reaction, Sb_2S_3 + 2 In -> InSb + 3 S arrow up is presented. a thin film of Sb_2S_3 with typically 0,2 um m thickness is produced on glass substrate by chemical bath deposition (CBD) at 10 deg C using thiosulfatoantimonate (III) complex. Subsequently, a thin film of indium is deposited on the Sb_2S_3 film by thermal evaporation. Annealing the thin film stack of Sb_2S_3-In at 300 deg C in a nitrogen atmosphere produces the InSb thin film. The formation of this film is confirmed by x-ray diffraction studies. We would discuss the optimization of the individual film thickness in the Sb_2S_3-In stack to produce a thin film of single phase InSb or a heterostructure, Sb_2S_2-InSb. The electrical and optical properties of the films are presented.