Thin film lamination, thin film magnetic sensor using the thin film lamination and method for manufacturing the thin film lamination

摘要

Relating to a thin film lamination and a thin film magnetic sensor using the thin film lamination and a method for manufacturing the thin film lamination that realizes a thin film conducting layer having high electron mobility and sheet resistance as an InAsSb operating layer. A thin film lamination is provided which is characterized by having an Al_xIn_1−xSb mixed crystal layer formed on a substrate, and an InAs_xSb_1−x (0x≦1) thin film conducting layer directly formed on the Al_xIn_1−xSb layer, in which the Al_xIn_1−xSb mixed crystal layer is a layer that exhibits higher resistance than the InAs_xSb_1−x thin film conducting layer or exhibits insulation or p-type conductivity, and its band gap is greater than the InAs_xSb_1−x thin film conducting layer, and the a lattice mismatch is +1.3% to −0.8%.