Method for producing a recess channel array transistor using a mask layer etching selectivity of the silicon substrate is large

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a recess channel array transistor.;SOLUTION: A recess channel trench is formed by etching a silicon substrate and an isolated insulating film using a mask layer pattern which is higher in etching selectivity to the silicon substrate, then a gate insulating film and a recess gate stack are formed on the recess channel trench, after which source/drain are formed on the silicon substrate at both side walls of the recess gate stack to complete the recess channel array transistor. In the method, a depth of the recess channel trench is easily adjusted using the mask layer pattern which is higher in etching selectivity to the silicon substrate when the recess channel trench is formed, and etching uniformity of the silicon substrate is improved.;COPYRIGHT: (C)2005,JPO&NCIPI