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Semiconductor Device With an Oversized Local Contact as a Faraday Shield
Semiconductor Device With an Oversized Local Contact as a Faraday Shield
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机译:具有超大局部触点作为法拉第屏蔽的半导体器件
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摘要
This application is directed to a semiconductor device with an oversized local contact as a Faraday shield, and methods of making such a semiconductor device. One illustrative device disclosed herein includes a transistor comprising a gate electrode and a source region, a source region conductor that is conductively coupled to the source region, a Faraday shield positioned above the source region conductor and the gate electrode and a first portion of a first primary metallization layer for an integrated circuit device positioned above and electrically coupled to the Faraday shield.
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