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METHOD OF CLEANING MULTILAYER COPPER WIRINGS IN ULTRA LARGE SCALE INTEGRATED CIRCUITS AFTER CHEMICAL-MECHANICAL POLISHING

机译:化学抛光后清洗超大型集成电路中多层铜线的方法

摘要

A method of cleaning multilayer copper wirings in ultra large scale integrated circuits after chemical-mechanical polishing, the method including: a) preparing a cleaning solution, the cleaning solution including between 0.1 and 5 wt. % of a nonionic surfactant, between 0.1 and 7 wt. % of a corrosion inhibitor, and between 0.1 and 0.6 wt. % of a chelating agent in deionized water; b) adjusting the pH value of the cleaning solution to between 7 and 8 using triethanolamine; c) during the production of ULSI, after the chemical-mechanical polishing step, washing the multilayer copper wirings with the cleaning solution at a flow rate of between 500 and 5000 mL/min for between 0.5 and 1 min; d) ultrasonic washing in the presence of deionized water under following conditions: 60 Hz frequency of ultrasound, 50° C. temperature, and between 0.5 and 1 min ultrasonic time; and e) drying the multilayer copper wirings.
机译:一种在化学机械抛光之后清洁超大规模集成电路中的多层铜布线的方法,该方法包括:a)制备清洁溶液,该清洁溶液包括0.1至5 wt。 %的非离子表面活性剂,在0.1和7wt。%之间。 %的腐蚀抑制剂,和0.1至0.6wt。%。去离子水中螯合剂的百分比; b)用三乙醇胺将清洗溶液的pH值调节到7至8之间; c)在ULSI的生产过程中,在化学机械抛光步骤之后,用清洗液以500至5000 mL / min的流速清洗多层铜布线0.5至1分钟; d)在以下条件下在去离子水存在下进行超声波洗涤:超声频率为60 Hz,温度为50°C且超声时间为0.5至1分钟; e)干燥多层铜布线。

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