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Enhancing Transistor Performance by Reducing Exposure to Oxygen Plasma in a Dual Stress Liner Approach
Enhancing Transistor Performance by Reducing Exposure to Oxygen Plasma in a Dual Stress Liner Approach
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机译:通过减少双重应力衬里方法中的氧等离子体暴露来提高晶体管性能
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摘要
When forming strain-inducing dielectric material layers above transistors of different conductivity type, the patterning of at least one strain-inducing dielectric material may be accomplished on the basis of a process sequence in which a negative influence of a fluorine species in an oxygen plasma upon removing the resist mask is avoided or at least significantly suppressed. For example, a substantially oxygen-free plasma process may be applied for removing the resist material.
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