SHIELDED GATE MOSFET-SCHOTTKY RECTIFIER-DIODE INTEGRATED CIRCUITS WITH TRENCHED CONTACT STRUCTURES
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机译:带沟槽接触结构的屏蔽栅MOSFET-肖特基整流器-二极管集成电路
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摘要
A trench shielded gate MOSFET device with embedded Schottky rectifier, Gate-Drain and Gate-Source clamp diodes on single chip is formed to achieve device shrinkage, lower cost and improved performance. The present semiconductor device achieve low Vf and reverse leakage current for embedded Schottky rectifier, having over-voltage protection and avalanche protection between gate and source and between gate and drain.
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