Method for manufacturing a power device being integrated on a semiconductor substrate, in particular having a field plate vertical structure and corresponding device

摘要

An embodiment of a method for manufacturing a power device integrated on a semiconductor substrate. The method includes photo-lithography and etching of an epitaxial layer for the formation of at least one deep trench; deposition of a dielectric layer with partial filling of the at least one trench; complete filling of the at least one trench with a layer of sacrificial material; selective etching of the dielectric layer with consequent retrocession below the layer of sacrificial material; selective etching of the layer of sacrificial material with consequent formation of an empty region within the at least one trench; and growth of a layer of gate oxide; formation of at least one gate region, of at least one buried source region, of at least one body region and of at least one source region.