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Transistor with an embedded strain-inducing material having a gradually shaped configuration
Transistor with an embedded strain-inducing material having a gradually shaped configuration
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机译:具有嵌入式应变感应材料的晶体管,该晶体管具有逐渐成形的配置
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摘要
In a transistor, a strain-inducing semiconductor alloy, such as silicon/germanium, silicon/carbon and the like, may be positioned very close to the channel region by providing gradually shaped cavities which may then be filled with the strain-inducing semiconductor alloy. For this purpose, two or more “disposable” spacer elements of different etch behavior may be used in order to define different lateral offsets at different depths of the corresponding cavities. Consequently, enhanced uniformity and, thus, reduced transistor variability may be accomplished, even for sophisticated semiconductor devices.
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