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Methods of Forming a PMOS Device with In Situ Doped Epitaxial Source/Drain Regions
Methods of Forming a PMOS Device with In Situ Doped Epitaxial Source/Drain Regions
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机译:用原位掺杂外延源/漏区形成PMOS器件的方法
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摘要
Disclosed herein is a method of forming a semiconductor device. In one example, the method includes forming extension implant regions in a PMOS region and a NMOS region of a semiconducting substrate for a PMOS device and a NMOS device, respectively and, after forming the extension implant regions, performing a first heating process. The method further includes forming a plurality of cavities in the PMOS region of the substrate, performing at least one epitaxial deposition process to form a plurality of in-situ doped semiconductor layers that are positioned in or above each of said cavities, and forming a masking layer that exposes the NMOS region and covers the PMOS region. The method concludes with the steps of forming source/drain implant regions in the NMOS region of the substrate for the NMOS device and performing a second heating process.
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