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Nano-crystal diamond film, manufacturing method thereof, and device using nano-crystal diamond film

机译:纳米晶金刚石膜,其制造方法以及使用该纳米晶金刚石膜的装置

摘要

A nano-crystal diamond film synthesized on a substrate and containing, as a major component, nano-crystal diamond having a grain diameter from 1 nm to less than 1000 nm. This nano-crystal diamond film can be formed on a substrate by means of a plasma CVD method using a raw material gas containing a hydrocarbon and hydrogen, allowing the formation of the nano-crystal diamond film to take place outside the plasma region. This nano-crystal diamond film is applicable to the manufacture of an electrochemical device, an electrochemical electrode, a DNA chip, an organic electroluminescent device, an organic photoelectric receiving device, an organic thin film transistor, a cold electron-emission device, a fuel cell and a catalyst.
机译:在基板上合成的纳米晶体金刚石膜,其包含作为主要成分的粒径为1nm至小于1000nm的纳米晶体金刚石。该纳米晶金刚石膜可以通过使用含有烃和氢的原料气体的等离子体CVD法在基板上形成,从而可以在等离子体区域的外侧进行纳米晶金刚石膜的形成。该纳米晶金刚石膜可用于制造电化学装置,电化学电极,DNA芯片,有机电致发光装置,有机光电接收装置,有机薄膜晶体管,冷电子发射装置,燃料。电池和催化剂。

著录项

  • 公开/公告号US8420043B2

    专利类型

  • 公开/公告日2013-04-16

    原文格式PDF

  • 申请/专利权人 HIDENORI GAMO;TOSHIHIRO ANDO;

    申请/专利号US20060598680

  • 发明设计人 TOSHIHIRO ANDO;HIDENORI GAMO;

    申请日2006-11-14

  • 分类号B01J2/00;B01J3/06;H01M2/00;H05H1/24;B32B5/16;G01N27/26;G01N15/06;H01L31/00;H01L29/08;H01L29/04;H01L29/10;

  • 国家 US

  • 入库时间 2022-08-21 16:46:15

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