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首页> 外文期刊>Journal of the Korean Physical Society >Characteristics of ZnO Nano-Crystals Grown onAl-doped ZnO Thin Films Deposited by Using the PLD Method
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Characteristics of ZnO Nano-Crystals Grown onAl-doped ZnO Thin Films Deposited by Using the PLD Method

机译:PLD法沉积Al掺杂ZnO薄膜上生长的ZnO纳米晶体的特性

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摘要

ZnO nano-crystal thin films were fabricated on Al-doped ZnO/Si0_2/Si substrates prepared byusing pulsed laser deposition with a solvothermal technique at a low temperature. The Al-dopedZnO substrate and ZnO nano-crystal thin films were preferably oriented in the (001) direction.In films, nucleation can be facilitated by the presence of the substrate, which constitutes a sitefor heterogeneous nucleation. ZnO nanorods were grown on Al-doped ZnO substrates in lengths of178.8, 851.4, and 916.2 mn for growing time of 24, 48, and 96 h, respectively. The ZnO nanorod thinfilm arrays with diameters of 45 ti 100 nm were separated by gaps of 30 ~ 90 nm. Photoluminescence(PL) spectroscopy using a He-Cd laser (325 nm, 40 mW) was employed to characterize the ZnOnanorod thin films. A strong blue emission centered at 377 nm was clearly observed at roomtemperature.
机译:ZnO纳米晶薄膜是在Al掺杂的ZnO / SiO_2 / Si衬底上制备的,该衬底是采用脉冲激光沉积和溶剂热技术在低温下制备的。铝掺杂的ZnO衬底和ZnO纳米晶体薄膜优选沿(001)方向取向。在膜中,可以通过存在衬底来促进成核,该衬底构成了非均相成核的位点。 ZnO纳米棒生长在Al掺杂的ZnO衬底上,长度分别为178.8、851.4和916.2 mn,生长时间分别为24、48和96 h。直径为45 ti 100 nm的ZnO纳米棒薄膜阵列被30〜90 nm的间隙隔开。使用He-Cd激光(325 nm,40 mW)的光致发光(PL)光谱来表征ZnOnanorod薄膜。在室温下清楚地观察到以377 nm为中心的强烈蓝色发射。

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