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Application of cluster beam implantation for fabricating threshold voltage adjusted FETs
Application of cluster beam implantation for fabricating threshold voltage adjusted FETs
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机译:簇束注入在制造阈值电压调整型FET中的应用
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摘要
Semiconductor structures including a high k gate dielectric material that has at least one surface threshold voltage adjusting region located within 3 nm or less from an upper surface of the high k gate dielectric are provided. The at least one surface threshold voltage adjusting region is formed by a cluster beam implant step in which at least one threshold voltage adjusting impurity is formed directly within the high k gate dielectric or driven in from an overlying threshold voltage adjusting material which is subsequently removed from the structure following the cluster beam implant step.
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