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Integration technique using thermal oxide select gate dielectric for select gate and replacement gate for logic
Integration technique using thermal oxide select gate dielectric for select gate and replacement gate for logic
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机译:使用热氧化物选择栅极电介质作为选择栅极并使用替代栅极作为逻辑的集成技术
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摘要
A control gate overlying a charge storage layer is formed. A thermally-grown oxygen-containing layer is formed over the control gate. A polysilicon layer is formed over the oxygen-containing layer and planarized. A first masking layer is formed defining a select gate location laterally adjacent the control gate and a second masking layer is formed defining a logic gate location. Exposed portions of the polysilicon layer are removed such that a select gate remains at the select gate location and a polysilicon portion remains at the logic gate location. A dielectric layer is formed around the select and control gates and polysilicon portion. The polysilicon portion is removed to result in an opening in the dielectric. A high-k gate dielectric and logic gate are formed in the opening.
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