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Stress engineering in a contact level of semiconductor devices by stressed conductive layers and an isolation spacer
Stress engineering in a contact level of semiconductor devices by stressed conductive layers and an isolation spacer
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机译:通过应力导电层和隔离垫片在半导体器件的接触层进行应力工程
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摘要
In sophisticated semiconductor devices, strain-inducing materials having a reduced dielectric strength or having certain conductivity, such as metal nitride and the like, may be used in the contact level in order to enhance performance of circuit elements, such as field effect transistors. For this purpose, a strain-inducing material may be efficiently encapsulated on the basis of a dielectric layer stack that may be patterned prior to forming the actual interlayer dielectric material in order to mask sidewall surface areas on the basis of spacer elements.
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