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Non-insulating stressed material layers in a contact level of semiconductor devices
Non-insulating stressed material layers in a contact level of semiconductor devices
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机译:半导体器件接触层中的非绝缘应力材料层
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摘要
In sophisticated semiconductor devices, non-insulating materials with extremely high internal stress level may be used in the contact level in order to enhance performance of circuit elements, such as field effect transistors, wherein the non-insulating material may be appropriately “encapsulated” by dielectric material. Consequently, a desired high strain level may be obtained on the basis of a reduced layer thickness, while still providing the insulating characteristics required in the contact level.
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