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Method for fabricating strained silicon-on-insulator structures and strained silicon-on insulator structures formed thereby
Method for fabricating strained silicon-on-insulator structures and strained silicon-on insulator structures formed thereby
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机译:应变绝缘体上硅结构的制造方法以及由此形成的应变绝缘体上硅结构
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摘要
A silicon-on-insulator (SOI) device and structure having locally strained regions in the silicon active layer formed by increasing the thickness of underlying regions of a buried insulating layer separating the silicon active layer from the substrate. The stress transferred from the underlying thickened regions of the insulating layer to the overlying strained regions increases carrier mobility in these confined regions of the active layer. Devices formed in and on the silicon active layer may benefit from the increased carrier mobility in the spaced-apart strained regions.
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