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Self-aligned dual damascene BEOL structures with patternable low-k material and methods of forming same
Self-aligned dual damascene BEOL structures with patternable low-k material and methods of forming same
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机译:具有可图案化低k材料的自对准双镶嵌BEOL结构及其形成方法
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摘要
A self-aligned interconnect structure is provided that includes a first patterned and cured low-k material located on a surface of a substrate, wherein the first patterned and cured low-k material includes at least one first interconnect pattern (via or trench pattern) therein. A second patterned and cured low-k material having at least one second interconnect pattern that is different from the first interconnect pattern is located atop the first patterned and cured low k material. A portion of the second patterned and cured low-k material partially fills the at least one first interconnect within the first patterned and cured low-k material. A conductive material fills the at least one first interconnect pattern and the at least one second interconnect pattern. A method of forming such a self-aligned interconnect structure is also provided.
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