A 45nm High Performance Bulk Logic Platform Technology (CMOS6) using Ultra High NA(1.07) Immersion Lithography with Hybrid Dual-Damascene Structure and Porous Low-k BEOL

摘要

We present the state-of-the-art 45nm high performance bulk logic platform technology which utilizes, for the first time in the industry, ultra high NA (1.07) immersion lithography to realize highly down-scaled chip size. Fully renovated MOSFET integration scheme which features reversed extension and SD diffusion formation is established to meet Vt roll-off requirement with excellent transistor performance of Ion=1100μA/μm for nFET and Ion=700μA/μm for pFET at Ioff=100nA/μm. Also, we achieved excellent BEOL reliability and manufacturability by implementing hybrid dual-damascene (DD) structure with porous low-k film (keff=2.7).