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Method for rapid estimation of layout-dependent threshold voltage variation in a MOSFET array
Method for rapid estimation of layout-dependent threshold voltage variation in a MOSFET array
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机译:快速估计MOSFET阵列中与布局有关的阈值电压变化的方法
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摘要
An automated method for estimating layout-induced variations in threshold voltage in an integrated circuit layout. The method begins with the steps of selecting a diffusion area within the layout for analysis. Then, the system identifies Si/STI edges on the selected area as well as channel areas and their associated gate/Si edges. Next, the threshold voltage variations in each identified channel area are identified, which requires further steps of calculating threshold voltage variations due to effects in a longitudinal direction; calculating threshold voltage variations due to effects in a transverse direction; and combining the longitudinal and transverse variations to provide an overall variation. Finally, a total variation is determined by combining variations from individual channel variations.
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