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Thin film of metal-silicon compound and process for producing the thin film of the metal-silicon compound

机译:金属-硅化合物的薄膜和制备该金属-硅化合物的薄膜的方法

摘要

The present invention relates to a thin film of a metal-silicon compound and a process for producing the thin film of the metal-silicon compound. The metal-silicon compound is a compound of a transition metal and silicon, and has a transition metal-containing silicon cluster as a unit structure, the transition metal-containing silicon cluster having a structure in which a transition metal atom is surrounded by seven to sixteen silicon atoms, two of which are first and second neighbor atoms to the transition metal atom.
机译:金属硅化合物的薄膜及其制造方法技术领域本发明涉及金属硅化合物的薄膜及金属硅化合物的薄膜的制造方法。金属-硅化合物是过渡金属和硅的化合物,并且具有含过渡金属的硅簇作为单元结构,含过渡金属的硅簇具有过渡金属原子被七个至七个环包围的结构。十六个硅原子,其中两个是过渡金属原子的第一和第二相邻原子。

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