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Semiconductor method of forming bump on substrate to prevent ELK ILD delamination during reflow process
Semiconductor method of forming bump on substrate to prevent ELK ILD delamination during reflow process
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机译:在基板上形成凸块以防止回流过程中ELK ILD分层的半导体方法
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摘要
A method of making a semiconductor device that has a flipchip semiconductor die and substrate. A first insulating layer is formed over the substrate. A via is formed through the first insulating layer. Conductive material is deposited in the via to form a conductive pillar or stacked stud bumps. The conductive pillar is electrically connected to a conductive layer within the substrate. A second insulating layer is formed over the first insulating layer. Bump material is formed over the conductive pillar. The bump material is reflowed to form a bump. The first and second insulating layers are removed. The semiconductor die is mounted to the substrate by reflowing the bump to a conductive layer of the die. The semiconductor die also has a third insulating layer formed over the conductive layer and an active surface of the die and UBM formed over the first conductive layer and third insulating layer.
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