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Fabrication of a semiconductor nanoparticle embedded insulating film luminescence device
Fabrication of a semiconductor nanoparticle embedded insulating film luminescence device
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机译:半导体纳米粒子埋入绝缘膜发光装置的制造
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摘要
A method is provided for fabricating a semiconductor nanoparticle embedded Si insulating film for short wavelength luminescence applications. The method provides a bottom electrode, and deposits a semiconductor nanoparticle embedded Si insulating film, including the element of N, O, or C, overlying the bottom electrode. After annealing, a semiconductor nanoparticle embedded Si insulating film has a peak photoluminescence (PL) at a wavelength in the range of 475 to 750 nanometers.
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