A fabrication method for the back-contacted crystalline silicon solar cell includes: texturing（S101） and diffusion（S102） on the surface of the semiconductor substrate, formation of vias in the semiconductor substrate after the diffusion（S103）, etching of the semiconductor substrate after vias formation（S104）, removal of the doped glass layer from the semiconductor substrate after the etching（S105）, film deposition on the light receiving side of the semiconductor substrate after the removal of the doped glass layer（S106）, and formation of electrodes and back surface fields on the semiconductor substrate after the film deposition（S107）. Consequently, the back-contacted crystalline silicon solar cell is obtained. In the method, the surface of the semiconductor substrate is diffused firstly, and the vias are formed in the semiconductor after the diffusion, so the inner walls of the through vias will not be diffused, namely there will be no emitter junctions in the through vias.
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