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Die-bonding method of LED chip and LED manufactured by the same

机译:发光二极管芯片的芯片接合方法及由其制造的发光二极管

摘要

A die-bonding method is suitable for die-bonding a LED chip having a first metal thin-film layer to a substrate. The method includes forming a second metal thin film layer on a surface of the substrate; forming a die-bonding material layer on the second metal thin film layer; placing the LED chip on the die-bonding material layer with the first metal thin film layer contacting the die-bonding material layer; heating the die-bonding material layer at a liquid-solid reaction temperature for a pre-curing time, so as to form a first intermetallic layer and a second intermetallic layer; and heating the die-bonding material layer at a solid-solid reaction temperature for a curing time, so as to perform a solid-solid reaction. The liquid-solid reaction temperature and the solid-solid reaction temperature are both lower than 110°C, and a melting point of the first and second intermetallic layers after the solid-solid reaction is higher than 200°C.
机译:芯片键合方法适合于将具有第一金属薄膜层的LED芯片芯片键合到基板上。该方法包括在基板的表面上形成第二金属薄膜层;以及在第二金属薄膜层上形成芯片接合材料层;将LED芯片放置在芯片接合材料层上,并使第一金属薄膜层接触芯片接合材料层;将所述芯片键合材料层在液固反应温度下加热预固化时间,以形成第一金属间层和第二金属间层。在固固反应温度下,将芯片接合材料层加热固化时间,从而进行固固反应。液固反应温度和固固反应温度均低于110℃,固固反应后的第一金属间层和第二金属间层的熔点高于200℃。

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