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Die-Bonding of LED Chips on Ag/Cu Substrate Using Sn/Zn/Bi/Sn and Sn/Bi/Zn/Bi/Sn Bonding Systems

机译:使用SN / ZN / Bi / Sn和Sn / Bi / Zn / Bi / Sn键合系统的LED芯片对LED芯片的芯片键合

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摘要

Two multilayer bonding structures have been designed to die-bond light-emitting diode (LED) chips on Ag/Cu thermal substrate, viz. Sn/ZnBi/Sn bilayer solder structure and Sn/BiZnBi/Sn sandwich solder structure. Both multilayer bonding structures successfully achieved LED chip die-attachment on Ag/Cu thermal substrate at relatively low temperature of 150A degrees C. However, voids formed more seriously at the bonding interface for the Sn/ZnBi/Sn bilayer structure. On the other hand, little voiding was seen at the bonding interface for the Sn/BiZnBi/Sn sandwich structure. The average shear strength of the Sn/ZnBi/Sn bilayer solder structure and Sn/BiZnBi/Sn sandwich solder structure was 25 MPa and 40 MPa, respectively. We believe that the improved shear strength results for the sandwich solder structure compared with the bilayer solder structure are mainly due to less voiding at the bonding interface, which weakens the interface joint shear strength. Also, the intermetallic compounds (IMCs) jointing region at the joint interface of the sandwich solder structure was larger than at the joint interface of the bilayer solder structure. We believe that the IMC jointing at the interface could improve the die-bonding strength, while the Zn content in the bonding structure promoted voiding at the bonding interface for both solder structures. Moreover, the Zn content in the bonding structure slightly reduced the IMC joint region at the bonding interface for both solder structures.
机译:设计了两个多层键合结构,用于在Ag / Cu热基板上的粘合发光二极管(LED)芯片,Viz上。 SN / Znbi / Sn双层焊接结构和Sn / Biznbi / Sn三明治焊接结构。在相对低的温度为150A℃的较低温度下,两种多层粘接结构在Ag / Cu热基板上成功地实现了LED芯片管芯附着。然而,在SN / ZnBi / Sn双层结构的粘合界面处更严重地形成空隙。另一方面,在SN / Biznbi / Sn Sandwich结构的粘合界面处看到小空隙。 SN / Znbi / Sn双层焊料结构和Sn / Biznbi / Sn三明治焊料结构的平均剪切强度分别为25MPa和40MPa。我们认为,与双层焊接结构相比,夹层焊料结构的改进剪切强度结果主要是由于粘合界面处的较少失效,这削弱了界面接头剪切强度。而且,夹层焊料结构的关节界面处的金属间化合物(IMC)连接区域大于双层焊料结构的关节界面。我们认为,在界面处的IMC接合可以提高芯片粘合强度,而粘合结构中的Zn含量在焊接界面处促进用于两个焊料结构的键合界面。此外,粘合结构中的Zn含量在焊接界面处略微减少了用于两个焊料结构的接合界面。

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