首页> 外国专利> NOVEL COMPOUND SEMICONDUCTOR AND THE APPLICATION OF THE SAME CAPABLE OF IMPROVING THE THERMAL CONDUCTIVE CHARACTERISTIC OF THE SEMICONDUCTOR

NOVEL COMPOUND SEMICONDUCTOR AND THE APPLICATION OF THE SAME CAPABLE OF IMPROVING THE THERMAL CONDUCTIVE CHARACTERISTIC OF THE SEMICONDUCTOR

机译:新型复合半导体及其在提高导热性能方面的应用

摘要

PURPOSE: A novel compound semiconductor and the application of the same are provided to improve the thermal conversion performance of the compound semiconductor.;CONSTITUTION: A novel compound semiconductor is represented by chemical formula 1. In chemical formula 1, M is Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu; A is one or more selected from a group including Fe, Ni, Ru, Rh, Pd, Ir, and Pt; X is one or more selected from a group including Si, Ga, Ge, and Sn; Q' is one or more selected from a group including O, S, and Se. x and y are between 0 and 1, m is between 0 and 1, inclusively, n is between 0 and 7, inclusively, and z and p are more than 0 and is less than or equal to 2.;COPYRIGHT KIPO 2013
机译:目的:提供一种新型化合物半导体及其应用,以提高化合物半导体的热转换性能。;组成:新型化合物半导体由化学式1表示。在化学式1中,M为Ca,Sr, Ba,Ti,V,Cr,Mn,Cu,Zn,Ag,Cd,Sc,Y,La,Ce,Pr,Nd,Sm,Eu,Gd,Tb,Dy,Ho,Er,Tm,Yb和Lu ; A是选自Fe,Ni,Ru,Rh,Pd,Ir和Pt中的一种或多种; X是从包括Si,Ga,Ge和Sn的组中选择的一个或多个; Q'是从包括O,S和Se的组中选择的一个或多个。 x和y在0和1之间,m在0和1之间,包括0,n在0和7之间,包括z和p大于0且小于或等于2。; COPYRIGHT KIPO 2013

著录项

  • 公开/公告号KR20120127304A

    专利类型

  • 公开/公告日2012-11-21

    原文格式PDF

  • 申请/专利权人 LG CHEM. LTD.;

    申请/专利号KR20120050261

  • 发明设计人 KIM TAE HOON;PARK CHEOL HEE;

    申请日2012-05-11

  • 分类号C01B19/00;C01G15/00;C01G51/00;C01G30/00;

  • 国家 KR

  • 入库时间 2022-08-21 16:28:39

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