GRAPHENE, A MANUFACTURING METHOD OF THE SAME, A SEMICONDUCTOR DEVICE USING THE SAME, AND A MANUFACTURING METHOD OF THE SEMICONDUCTOR CAPABLE OF OBTAINING GRAPHENE OF VARIOUS CONDUCTIVE CHARACTERISTIC AND THE SEMICONDUCTOR USING THE GRAPHENE

摘要

PURPOSE: Graphene and a manufacturing method of the same, a semiconductor device using the same, and a manufacturing method of the semiconductor are provided to control the electric characteristic of the graphene by generating the structural change of the graphene.;CONSTITUTION: A manufacturing method of graphene controls the electric characteristic of graphene(104) by generating the structural change of the graphene. The structural change of the graphene is generated by doping nitrogen into the graphene based on nitrogen plasma treatment. The structural change of the graphene controls the electric characteristic of the graphene based on conductivity. The conductivity is controlled by the power of nitrogen plasma, the flux of nitrogen, the generating pressure of the nitrogen plasma, and the contact time of the nitrogen plasma and the graphene.;COPYRIGHT KIPO 2013