CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR ARF IMMERSION LITHOGRAPHY AND PATTERN FORMING PROCESS

摘要

PURPOSE: A chemically amplified positive resist composition is provided to minimize the change of a pattern shape due to a liquid exposure by not having a cation eruption. CONSTITUTION: A chemically amplified positive resist composition comprises: 3,3,3-trifluoro-2-hydroxy-2-trifluororomethyl propionic acid sulfonate indicated in chemical formula 1-1; one or more acid generator indicated in chemical formula 1-2; a base resin as an alkali-developing solution-insoluble resin which has an acid functional group protected by an acid-unstable group; and an organic solvent. In the chemical formula 1-1, Ar` can form a ring which is combined with an oxygen atom, methylene group, sulfone group, or carbonyl group and can form a ring which comprises aromatic ring together with a sulfur atom. In chemical formula 1-2, R4 is a C1-30 alkyl group, alkenyl group or aralkyl group, and R5 is a hydrogen atom or trifluoromethyl group.