CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR ArF IMMERSION LITHOGRAPHY AND PATTERN FORMING PROCESS

摘要

(A) triarylsulfonium represented by the formula (1-1) = 2,3,3,3-tetrafluoro-2-(1,1,2,2,3,3,3-heptafluoroprop Foxy) propanoate,(B) an acid generator represented by the formula (1-2)(C) a base resin,(D) Organic solventWherein the resist pattern is formed of a resist pattern. (Ar is an aryl group.) (R^OneIs an alkyl group, an alkenyl group or an aralkyl group. R²Is a hydrogen atom or a trifluoromethyl group. Ar is an aryl group.According to the present invention, since the hydrophobicity is high and the elution to the immersion water is low and the acid diffusion can be controlled, a pattern profile of high resolution can be constructed.;