TWO-LIGHT FLUX INTERFERENCE EXPOSURE DEVICE, TWO-LIGHT FLUX INTERFERENCE EXPOSURE METHOD, SEMICONDUCTOR LIGHT EMITTING ELEMENT MANUFACTURING METHOD, AND SEMICONDUCTOR LIGHT EMITTING ELEMENT

摘要

Ar laser second harmonic of , or to the fourth harmonic of Nd -doped YAG laser as the light source , the very uniform by the etalon and a half wave plate , and realizes a two -beam interference exposure apparatus is capable of generating a high coherence laser beam . In addition , the two- beam interference exposure is performed by the exposure of the periodic pattern in the photoresist mask , subjected to the developing of the photoresist mask , and the resist pattern as a mask is performed to form a pattern of a mask for etching the semiconductor layer , the resist was removed , crazy by the step of etching the resin receiving surface may provide a very low cost with a high energy conversion efficiency semiconductor light emitting element .