LIGHT EMITTING DIODE HAVING ＡｌＧａＩｎＰ ACTIVE LAYER

摘要

A light-emitting diode is disclosed having an AlGaInP active layer. The light-emitting diode includes a conductive substrate . A plurality of light emitting cells each including an AlGaInP active layer above the conductive substrate are positioned apart from each other . On the other hand , a semi- insulating buffer layer between the substrate and the light emitting cells are disposed . In addition, the wiring that connects the plurality of light emitting cells in series . Accordingly , since the plurality of light emitting cells are electrically insulated by a semi-insulating buffer layer is connected in series with each other by the wires , it is possible to provide an AC light emitting diode which can be driven by a power source .