Improved Light-extraction Efficiency of the AlGaInP-based Light-emitting Diodes Fabricated Using a Chemical Wet Etch of n-AlGaInP Layer

摘要

In this study, we investigated the effect of n-side roughness on the light extraction efficiency of vertical AlGaInP-based light-emitting diodes (LEDs). Chemical wet etching using a H3PO4-based solution was applied to the n-side AlGaInP surface. A uniform triangle-like shape was produced on the n-AlGaInP surface after the chemical wet etch. The luminous intensity of the AlGaInP-based LEDs with n-side roughness shown to be much higher than that of the LEDs without n-side roughness