AlGaInP-BASED LIGHT EMITTING DIODE AND FABRICATING METHOD THEREOF FOR IMPROVING OPTICAL OUTPUT EFFICIENCY

摘要

PURPOSE: An AlGaInP-based light emitting diode and a fabricating method thereof are provided to improve the optical output efficiency by using a p-type transparent substrate instead of an absorbing substrate. CONSTITUTION: A p-type electrode(180) is formed on a bottom face of a p-type transparent substrate(110). A p-type window layer(120), a p-type clad layer(130), an active layer(140), an n-type clad layer(150), an n-type window layer(160), and an n-type electrode(170) are sequentially formed on an upper surface of the p-type transparent substrate. The p-type transparent substrate is formed with GaP, ZnSe, or ZnS. A thickness of the p-type transparent substrate is 50 to 350 micrometers.