LIGHT EMITTING DIODE HAVING ALGAINP ACTIVE LAYER

摘要

A light emitting diode having an AlGaInP active layer is provided to be directly connected to an AC power source by using a semi-insulating buffer layer for electrically isolating light emitting cells from a conductive substrate. Plural light emitting cells having an AlGaInP active layer(57) are spaced apart from each other on a conductive substrate(51). A semi-insulating buffer layers(53) are interposed between the substrate and the light emitting cells, and interconnections(67) are connected to the light emitting cells in series. Each of the light emitting cells includes a first conductive lower semiconductor layer(55), a second conductive layer upper semiconductor layer(59) formed on the active layer, and a window layer formed on the upper semiconductor layer.