Method for Manufacturing Thin Film Transistor of Poly Silicon Having Cu Bottom Gate Structure of Trench Type

摘要

This invention is a polysilicon thin film transistor having a bottom gate structure and a process for producing the shape of the trench using a copper relates to a method . The present invention is a transparent insulating substrate ; The formation of a transparent insulating pattern corresponding to the pattern on the substrate and gate oxide patterns are used to form the gate electrode ; The trench having a trench -shaped guide portion which contact window exposes the top of the seed pattern; A gate electrode formed in the trench on the exposed copper seed pattern is electrodeposited ; The gate electrode and gate insulating film formed on a trench -shaped guide portion thereon; And a channel region, a source region and a drain region formed in the polysilicon layer that is on top of the gate insulating film . ;