High-performance top and bottom double-gate low-temperature poly-silicon thin film transistors fabricated by excimer laser crystallization

摘要

In this work, high-performance low-temperature poly-silicon (LTPS) thin film transistors (TFTs) with double-gate (DG) structure and lateral grain growth have been demonstrated by excimer laser crystallization (ELC). Therefore, the DG TFTs with lateral silicon grains in the channel regions exhibited better current-voltage characteristics as compared with the conventional solid-phase crystallized (SPC) poly-Si double-gate TFTs or conventional ELC top-gate (TG) TFTs. The proposed ELC DG TFTs (W/L = 1.5/1.5 μm) had the field-elTect-mobility exceeding 400 cm~2/V s, on/off current ratio higher than 10~8, superior short-channel characteristics and higher current drivability.