Nonvolatile memory device having threshold switching resistor, memory array containing the memory device and method for manufacturing the array

摘要

The present invention is a non-volatile memory device including a resistive material having a threshold switching characteristics , the memory array comprising the same and that relates to a production process , and provides a memory device , the memory array and a method of manufacturing this pohamneun made by laminating the upper and lower data saved in the switching elements forming the switching threshold resistor showing a characteristic between the parts of electrodes .