Microstrip antenna gallium arsenide

摘要

The proposed device is a microwave technology and can be used as a basic element generators and receivers of electromagnetic radiation waves SHF and EHF bands. Utility model allows to simplify the technology of creating a microstrip antenna by eliminating the process of coating a substrate with a dielectric layer, in which the result of thermal heating may damage the core element (diode or transistor). The microstrip antenna comprises a gallium arsenide semi-insulating substrate of gallium arsenide with an intermediate layer on its surface and disposed over the intermediate layer metal film of a predetermined configuration, wherein the intermediate layer is made of gallium arsenide n-type.