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DEVICE FOR NON-DESTRUCTIVE thickness measurement of dielectric and semiconductor films

机译:介电膜和半导体膜的无损测厚装置

摘要

The invention relates to measuring equipment and is designed for quick and highly accurate measurement of the thickness of the solid and liquid dielectric and semiconductor films and coatings in the thickness range from 10 micrometers to 1 mm and can be used in the manufacturing process control films production and research.; An apparatus for the nondestructive measurement of the thickness of the dielectric and semiconductor films containing a source of monochromatic radiation, a sample holder, a rotating flat mirror, the axis of rotation which is located on its reflective surface and a radiation receiver which is connected to the recording apparatus, the first spherical mirror mounted so that the point optically conjugate to the sample point at which the measurements are made, it is on the rotational axis of the flat mirror in place of the radiation falling on it Source and a second spherical mirror mounted to the optical conjugation of the sample point at which the measurements are made, and a receiving area of ​​the radiation receiver, for different angular positions of the plane mirror, characterized in that the device further comprises an electro-optical marker, without interrupting the fall of the laser beam on the sample at a fixed angle, consisting of an additional laser and photodetector of the additional laser.
机译:本发明涉及一种测量设备,被设计用于快速和高精度地测量厚度范围从10微米到1mm的固态和液态介电和半导体膜以及涂层的厚度,并且可以用于制造过程控制膜的生产中。和研究。一种用于电介质和半导体膜厚度的非破坏性测量的设备,该设备包含单色辐射源,样品架,旋转平面镜,位于其反射面上的旋转轴和与之连接的辐射接收器在记录设备上,安装了第一球面镜,使其与进行测量的采样点光学共轭,并且该点在平面镜的旋转轴上,代替了辐射落在平面镜上。对于平面镜的不同角度位置,安装在进行测量的采样点和辐射接收器的接收区域的光学共轭上,其特征在于该设备还包括一个电光标记,没有以固定的角度中断激光束在样品上的落下,该角度由附加的激光和附加的光电探测器组成激光。

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