Method for manufacturing number of conversion layers for radiation detector, involves growing semiconductor crystals on seed layer in crystal growth apparatus with structure-forming elements for one or more conversion layers

摘要

The method involves producing conversion layer (3) whose structured side (4) is provided with a pixel structure for the application of a pixel electrode (12) and the unstructured side (5) for the application of counter electrode (11). The semiconductor crystals are grown on a seed layer in a crystal growth apparatus with structure-forming elements for one or more conversion layers having structured side. The structural forming elements are made of material which includes carbon, boron nitride coated quartz, carbon coated quartz, pyrolytic boron, pyrolytic carbon or combination.