Chemical vapor deposition at atmospheric pressure with saturation control

摘要

It is a method for coating a substrate, at atmospheric pressure, to a temperature below the condensation temperature of a semiconductor material is heated, is disclosed, the method comprising the steps of mixing a mass of hableitermaterial and a heated inert gas stream, of the vaporization of the controlled mass of semiconductor material in the inert gas, in order to produce under saturated fluid mixture, of the steering of the undersaturated fluid mixture to a substrate, wherein the substrate is located essentially in the case of atmospheric pressure, of depositing a layer of semiconductor material on a surface of the substrate, of the extracting not deposited semiconductor material and of the repeating the steps of generating, steering, depositing and extracting in order to minimize an amount not deposited semiconductor material comprises.